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NXIR WaferOpto Diode Corporation, an ITW company, has introduced and range of silicon photodiodes designed specifically for back-facet laser-monitoring applications that require improved performance in the near-infrared (NIR) spectrum from 700 nm to 1100 nm.


ODC's NXIR-family expands the company’s popular high performance SXUV and UVG photodiode series designed to maximise measurement repeatability and reliability in high-powered UV laser-monitoring systems with affordable products optimized for near-infrared wavebands.


The NXIR-RF36 and NXIR-RF70 near-IR / red-enhanced models offer reduced footprints and are ideally suited for integration with semiconductor lasers notably, Fabry-Perot (FP), distributed feedback (DFB), and vertical-cavity surface-emitting lasers (VCSELs).


The new devices have high responsivity of 0.65A/W @ 850nm, low capacitance of 5pF at 0 Volts, and high shunt resistance, greater than 200 MΩ.


The NXIR-RF36 has an active area of 0.36mm² while the NXIR-RF70 is 0.70mm². Both detectors are available in either waffle pack or dicing tape for high-volume shipments.


Opto Diode’s third device in the series, the NXIR-5W, is designed for high power laser monitoring that requires higher responsivity in the NIR spectrum. It can be utilised with Nd:YAG lasers used in biological, dental, and medical equipment, plus fluid dynamics, manufacturing, and military applications. The NXIR-5W has high responsivity of 0.45A/W at 1064nm with low reverse bias voltage of 10V, low dark current of 1nA, and low capacitance of 10pF.


The NXIR-5W is available in a hermetically-sealed, standard two-lead TO-5 package.


Click here for more information on the NXIR series of photodetectors or for volume pricing quotes, please contact APT.