Opto Diode Corporation have introduced a range of three avalanche photodiodes featuring InGaAs and Silicon technology for operating wavelengths of 900nm to 1700nm (InGaAs) and 400nm to 1100nm (Silicon). These high performance APDs are designed to achieve superior gain with ultra-low noise and deliver excellent consistency across the visible and SWIR spectrum.
Three Models Infinite Applications
Engineered for precision and versatility, Opto Diode’s new Avalanche Photodiodes deliver high sensitivity, fast response, and low noise performance across visible to SWIR wavelengths, empowering applications from LiDAR and optical communication to medical imaging, scientific research, and beyond.
Ready for Any Environment
Each APD is engineered for stability and long-term reliability under the toughest conditions. With hermetically sealed construction, low dark current, and fast response times, these detectors maintain performance across extreme temperature, vibration, and radiation environments.
Engineered for Every Industry
Every device is designed, characterised, and rigorously tested in-house at Opto Diode’s California wafer fabrication and R&D facility—ensuring consistent operation across temperature, vibration, and radiation extremes. ODC's APDs deliver unmatched precision in every application and are proven dependable from laboratory use to aerospace and defense environments. Covering wavelengths from visible to SWIR, these APDs provide the precision, stability, and performance needed to power cutting-edge advances in sensing, imaging, and photonic systems development.
Custom devices with integrated optical filters, different active area sizes and combined APD-preamplifiers can also be offered.
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