We offer "4mm" active area silicon photomultipliers based on Broadcom's latest NUV-MT (Metal-filled Trench) technology.
The new NUV-MT devices offer significantly higher Photon Detection Efficiency (PDE) along with reduced Dark Count Rate (DCR) and excellent timing performance.
Broadcom's AFBR-S4N44C014M SiPM has an active area of 3.72 x 3.72mm² and a footprint of 3.88 x 3.88mm² allowing for array designs with 4mm centre-to-centre pitch.
The NUV-MT family also introduces a new high performance over-molded PCB package offering high transparency from 250nm to 900nm in a rugged, reliable and low cost package.
Broadcom also supply the AFBR-S4N44P164M 4x4 array with a footprint of 16 x 16 mm² and 2x2 AFBR-S4N44P044M. These surface mount PCBs with LGA contacts are a convenient solution for investigating the performance of SiPM arrays without having to design and manufacture your own array. They are also available in high volumes for customers building their own arrays requiring a 4mm pitch.
Part Number |
SPAD Pitch (µm) |
# of SPADs |
PDE (420nm) @ Vob |
DCR (Hzmm-²) @ Vob |
Gain (106) @ Vob |
Recharge Time Constant |
Cross Talk @ Vob |
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AFBR-S4N44C014M | 40 | 8622 | 63%, 12V | 125k, 12V | 7.3, 12V | 55ns, 12V (25Ω) |
23%, 12V |
User Manuals & Guides | |
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Product Brief, NUV-MT SiPM range |
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Brief Introduction to SiPM Technology |
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Evaluation board for Broadcom SiPMs |
For more information on SiPMs and the performance characteristics of Broadcom NUV-MT products please visit our "What is an SiPM" article and SiPM Support pages accessed by the menu on the right of this page or