We offer 2mm active area silicon photomultipliers based on Broadcom's latest NUV-MT (Metal-filled Trench) technology.
The new NUV-MT devices offer significantly higher Photon Detection Efficiency (PDE) along with reduced Dark Count Rate (DCR) and excellent timing performance.
Broadcom's AFBR-S4N22C014M SiPM has an active area of 2.0 x 2.0mm² and a footprint of 2.71 x 2.48mm² allowing for array designs with less than 3mm centre-to-centre pitch.
The NUV-MT family also introduces a new high performance over-molded PCB package offering high transparency from 250nm to 900nm in a rugged, reliable and low cost package.
| Part Number |
SPAD Pitch (µm) |
# of SPADs |
PDE (420nm) @ Vob |
DCR (Hzmm-²) @ Vob |
Gain (106) @ Vob |
Recharge Time Constant |
Cross Talk @ Vob |
|
 |
AFBR-S4N22C014M | 40 | 2464 | 63%, 12V | 125k, 12V | 7.3, 12V | 55ns, 12V (25Ω) |
23%, 12V |
| User Manuals & Guides | |
|
Product Brief, NUV-MT SiPM range |
|
Brief Introduction to SiPM Technology |
|
Evaluation board for Broadcom SiPMs |
For more information on SiPMs and the performance characteristics of Broadcom NUV-MT products please visit our "What is an SiPM" article and SiPM Support pages accessed by the menu on the right of this page or
