AP Technologies is pleased to announce the international release of Opto Diode Corporation’s new red-enhanced ODD-3W-2 silicon bi-cell photodiode.
This low noise detector has a Noise Equivalent Power (NEP) of only 2.5x10^14W/rtHz in combination with a high shunt resistance of 250MOhm (min.) and a low Dark Current of 2.5nA (max.) at 5V.
Individual pixels are 2.54mm x 1.22mm (3.1mm²) with excellent responsivity of 0.55A/W at 900nm.
The ODD-3W-2 is packaged in an industry-standard TO-5 package with a low-profile flat-window can allowing maximum Field-Of-View and optimum location of any external optics, such as filters.
Opto Diode’s ODD-3W-2 is ideal for position-sensing applications, emitter alignment, test-and-measurement and other industrial tasks where single-axis nulling is required.
The ODD-3W-2 is manufactured at Opto Diode’s state-of-the-art facility in Newbury Park, California in their Class 1000 cleanroom and high volume fully-automated packaging facility.
For additional information on the ODD-3W-2 please visit the Multi-Element Silicon Photodiodes pages or contact APT to discuss your requirement.