We offer "6mm" active area silicon photomultipliers based on Broadcom's latest NUV-MT (Metal-filled Trench) technology.
The new NUV-MT devices offer significantly higher Photon Detection Efficiency (PDE) along with reduced Dark Count Rate (DCR) and excellent timing performance.
Broadcom's AFBR-S4N66C014M SiPM has an active area of 6.14 x 6.14mm² and a footprint of 6.48 x 6.71mm².
The NUV-MT family also introduces a new high performance over-molded PCB package offering high transparency from 250nm to 900nm in a rugged, reliable and low cost package.
Broadcom also supply the AFBR-S4N66P024M 2x1 array with a footprint of 13.54 x 6.54 mm². This surface mount PCB with LGA contacts is a convenient solution for investigating the performance of the SiPM array without having to design and manufacture your own array and is also available in high volume volumes.
| Part Number |
SPAD Pitch (µm) |
# of SPADs |
PDE (430nm) @ Vob |
DCR (Hzmm-²) @ Vob |
Gain (106) @ Vob |
Recharge Time Constant |
Cross Talk @ Vob |
|
 |
AFBR-S4N66C014M | 40 | 22428 | 63%, 12V | 125k, 12V | 7.3, 12V | 55ns, 12V 25Ω |
23%, 12V |
| User Manuals & Guides | |
|
Product Brief, NUV-MT SiPM range |
|
Brief Introduction to SiPM Technology |
|
Evaluation board for Broadcom SiPMs |
For more information on SiPMs and the performance characteristics of Broadcom NUV-MT products please visit our "What is an SiPM" article and SiPM Support pages accessed by the menu on the right of this page or
