UVG20C Radiation-Hard Photodiodes

Opto Diode Corporation, a division of ITW, announces the UVG20C, a 4.9mm diameter (19mm²) active area photodiode with typical responsivity of  0.115A/W at 254nm.

 

The new 19mm² photodiode is specially designed for detection between 193nm to 400nm and operates at 100 percent internal quantum efficiency in the UV and visible regions.

 

The UVG20C is extremely stable, exhibiting less than a 2% drop in responsivity after exposure to MJ/c of 254nm light and is ideal for use in applications such as laser power monitoring, photolithography, and other high power density applications utilising ultraviolet light.

 

Thermal parameters for storage and operation range between -20 °C to 80 °C. The maximum junction temperature is 80°C and the lead soldering temperature is 240°C (0.0625 inches from the case for 10 seconds).

 

The photodiode is mounted in a TO-8 header with a windowless cap and ships with a temporary cover to protect the detector and wire bond.

 

For more information about Opto Diode’s IRD UV photodiodes, please visit our UVG-Series page.

 

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