ODA-5W-100M

AP Technologies is pleased to announce the international release of Opto Diode Corporation’s ODA-5W-100M which combines a high responsivity 5mm² active area silicon photodiode with a 100 Mega-Ohm preamplifier.

 

Typical applications for these high sensitivity devices are fluorescence spectroscopy and low-light-level tasks where electrical noise can affect the photodiode signal if the detector and amplifier are separate components on a circuit board.

 

The standard red/NIR-enhanced device has a responsivity of 40V/µW at 660nm – visible enhanced versions can also be supplied. The ODA-5W-100M operates from ±15V and is supplied in a hermetically sealed 4+1 lead TO-5 window package and has a frequency response of 1kHz, a low Offset Voltage of ±1mV and Dark Offset Noise of 5mVrms.

 

Martin Sharratt - Managing Director of APT said “as well as being an exciting product in its own right the addition of the ODA-5W-100 provides a platform for a wide range of application-specific solutions by optimising the detector geometry and feedback circuitry”.

 

The ODA-5W-100M is manufactured at Opto Diode’s state-of-the-art facility in Newbury Park, California in their Class 1000 cleanroom and high volume fully-automated packaging facility.

 

For more information on ODC’s detector/preamplifier range please visit the Silicon Detector-Preamplifiers webpage or contact AP Technologies.

 

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