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Silicon Photodiodes—Single Element |
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These ion-implanted planar structure silicon photodiodes are designed for either photoconductive (low capacitance, high speed applications) or photovoltaic operation (low noise, DC applications). A range of standard active areas are offered—from 1 mm˛ to 42 mm˛ with “Blue” and “Red/NIR” anti-reflection coating offering response from 400 nm to 1100 nm. Custom devices with different active area sizes and shapes can also be offered. |
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Part Number Click for PDF |
Package |
Responsivity (A/W) |
Active Area |
Dark Current (nA) 10 V |
C (pF) 0 V |
Tr/Tf (nS) 10 V |
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Typ |
Min |
@ |
mm |
mm˛ |
Typ |
Max |
Typ |
Typ |
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TO-46, “glob top” |
0.40 |
0.35 |
632 nm |
1.35x0.76 |
1.0 |
0.2 |
1.0 |
0.2 |
8 |
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0.28 |
0.20 |
450 nm |
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TO-5, Window |
0.40 |
0.35 |
632 nm |
2.54 dia. |
5.0 |
1.0 |
3.0 |
11 |
10 |
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0.28 |
0.20 |
450 nm |
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TO-5, Window, Isolated |
0.40 |
0.35 |
632 nm |
2.54 dia. |
5.0 |
1.0 |
3.0 |
11 |
10 |
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0.28 |
0.20 |
450 nm |
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TO-8, Window |
0.40 |
0.35 |
632 nm |
4.00 dia. |
12.0 |
3.0 |
7.0 |
25 |
15 |
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0.28 |
0.20 |
450 nm |
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TO-5, Window |
0.40 |
0.35 |
632 nm |
6.27x2.52 |
15.0 |
4.0 |
10.0 |
30 |
20 |
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0.28 |
0.20 |
450 nm |
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TO-8, Window |
0.40 |
0.35 |
632 nm |
9.91x4.28 |
42.0 |
11.0 |
25.0 |
85 |
30 |
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0.28 |
0.20 |
450 nm |
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