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Silicon Photodiodes—Hybrid Detector/Preamplifiers |
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These devices combine a silicon photodiode with an integrated operational amplifier in a transimpedance configuration to provide front-end photocurrent to voltage conversation. Opto Diode can supply high speed or low noise configurations optimised for your application through choice of the detector active area, capacitance, dark current and noise in conjunction with the op-amp characteristics. For maximum gain with optimum stability it is possible to specify devices with an integrated Peltier cooler. Please contact AP Technologies to discuss your application. |
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• Single-Element |
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• High Speed Low Bias |
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• Hybrid Detector-Preamps |
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• Silicon Photodiodes |
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• GaAlAs Photodiodes |
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Part Number Click for PDF |
Package |
Active Area |
TI Gain |
Sensitivity |
NEP pWHz–˝ |
Dark Offset mV |
Dark Offset Noise |
Frequency Response |
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mm |
mm˛ |
W |
Typ. |
Typ . |
Max. |
rms Max. |
Typ. |
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4-lead, TO-5, Window |
2.54 dia. |
5.1 |
100k |
63 V/mW |
6.76 |
±1.0 |
1.0 mV |
800 kHz |
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4-lead, TO-5, Window |
2.54 dia. |
5.1 |
100M |
63 V/µW |
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±5.0 |
5.0 mV |
1.0 kHz |
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4-lead, TO-5, Window |
1.8x3.2 |
6.0 |
100M |
63 V/µW |
0.08 |
±2.0 |
250 µV |
1.0 kHz |
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4-lead, TO-5, Window |
1.8x3.2 |
6.0 |
500M |
315 V/µW |
0.06 |
±2.0 |
500 µV |
130 Hz |
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