Silicon detectors have been the detector-of-choice for UV to NIR applications for many years. However, their wide spectral response that applications requiring response across limited spectral range require additional optical filtering – adding complexity and cost whilst also reducing the in-band signal.

ODC’s GaAlAs detectors are specifically targeted at applications requiring detection of an 880 nm LED and bring significant advantages to the system designer. They have a far narrower spectral range resulting in less background signal whilst responsivity at 880 nm is higher than for a silicon device.

As a general rule a designer can expect the signal-to-background figure for the GaAlAs detector will be 2—3 times higher than for any silicon/filter combination and >15 times higher than for a bare silicon detector. For a detailed article discussing the relative merits of Opto Diode’s GaAlAs detectors compared to silicon photodiodes please click here.

GaAlAs detectors are available in two standard sizes in either case-live or case-isolated configurations.

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Part

Number

Click for PDF

Package

Active Area

Dark Current

nA @ 5 V

Capacitance

pF (Typ)

Rise Time

µS @ 5 V

Responsivity

A/W @ 0 V

mm˛

Typ

Max.

0 V

5 V

Typ.

650 nm

750 nm

880 nm

ODD-45W

TO-18, Window

1.0

0.4

2.0

170

90

1

0.005

0.01

0.6

ODD-45WISOL

TO-18, Window, Isolated

1.0

0.4

2.0

170

90

1

0.005

0.01

0.6

ODD-95W

TO-5, Window

5.0

1.0

5.0

700

350

1

0.005

0.01

0.6

ODD-95WISOL

TO-5, Window, Isolated

5.0

1.0

5.0

700

350

1

0.005

0.01

0.6